absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 75* i d @ v gs = 12v, t c = 100c continuous drain current 75* i dm pulsed drain current ? 300 p d @ t c = 25c max. power dissipation 300 w linear derating factor 2.4 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 500 mj i ar avalanche current ? 75 a e ar repetitive avalanche energy ? 30 mj dv/dt p eak diode recovery dv/dt ? 0.35 v/ns t j operating junction -55 to 150 t stg storage temperature range package mounting surface temperature 300 ( for 5 sec.) weight 3.3 (typical ) g pre-irradiation international rectifiers radhard hexfet ? technol- ogy provides high performance power mosfets for space applications. this technology has over a de- cade of proven performance and reliability in satellite applications. these devices have been character- ized for both total dose and single event effects (see). the combination of low rds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of elec- trical parameters. o c a radiation hardenedpower mosfet surface mount(smd-2) 12/18/01 www.irf.com 1 product summary part number radiation level r ds(on) i d irhna7z60 100k rads (si) 0.009 75*a irhna3z60 300k rads (si) 0.009 75*a irhna4z60 600k rads (si) 0.009 75*a irhna8z60 1000k rads (si) 0.009 75*a for footnotes refer to the last page *current is limited by internal wire diameter irhna7z60 30v, n-channel rad-hard ? hexfet ? technology smd-2 features: single event effect (see) hardened low r ds(on) low total gate charge proton tolerant simple drive requirements ease of paralleling hermetically sealed surface mount ceramic package light weight pd - 91708b downloaded from: http:///
2 www.irf.com irhna7z60 pre-irradiation note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) 75* i sm pulse source current (body diode) ? 300 v sd diode forward voltage 1.8 v t j = 25c, i s = 75a, v gs = 0v ? t rr reverse recovery time 245 ns t j = 25c, i f = 75a, di/dt 100a/ s q rr reverse recovery charge 1.1 c v dd 50v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a thermal resistance parameter min typ max units test conditions r thjc junction-to-case 0.42 r thj-pcb junction-to-pc board 1.6 soldered to a 1 sq. copper-clad board electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 30 v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown 0.023 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.009 v gs = 12v, i d = 75a resistance v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 31 s ( )v ds > 15v, i ds = 75a ? i dss zero gate voltage drain current 25 v ds = 24v ,v gs =0v 250 v ds = 24v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 421 v gs =12v, i d = 75a q gs gate-to-source charge 104 nc v ds = 15v q gd gate-to-drain (miller) charge 74 t d (on) turn-on delay time 32 v dd =15v, i d = 75a t r rise time 370 v gs =12v, r g = 2.35 t d (off) turn-off delay time 150 t f fall time 280 l s + l d total inductance 4.0 c iss input capacitance 7000 v gs = 0v, v ds = 25v c oss output capacitance 4800 pf f = 1.0mhz c rss reverse transfer capacitance 1800 na ? nh ns a *current is limited by the internal wire diameter measured from the center ofdrain pad to center of source pad c/w downloaded from: http:///
www.irf.com 3 pre-irradiation irhna7z60 table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter 100k rads(si) 1 300 - 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 30 30 v v gs = 12v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.25 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 100 na v gs = 20v i gss gate-to-source leakage reverse -100 -100 v gs = -20 v i dss zero gate voltage drain current 25 50 a v ds =24v, v gs =0v r ds(on) static drain-to-source ? 0.009 0.03 v gs = 12v, i d =15a on-state resistance (to-3) r ds(on) static drain-to-source ? 0.009 0.03 v gs = 12v, i d =15a on-state resistance (smd-2) v sd diode forward voltage ? 1.8 1.8 v v gs = 0v, i s = 75a international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. 1. part number irhna7z602. part numbers irhna3z60, irhna4z60 and irhna8z60 fig a. single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page table 2. single event effect safe operating area noi tel ))2mc/gm(/vem ygrene )vem( egnar )m( )v(sdv v0=sgv @v 5-=sgv @v 01-=sgv @v 51-=sgv @v 02-=sgv@ r b8 .6 35 0 39 30 30 30 35 20 2 i9 .9 55 4 38 .2 35 25 20 25 10 1 u a3 .0 83 1 35 .6 25 .2 25 .2 25 10 1_ radiation characteristics 0 5 10 15 20 25 30 35 0 -5 -10 -15 -20 vgs vds br i au downloaded from: http:///
4 www.irf.com irhna7z60 pre-irradiation 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v fig 1. typical output characteristics 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v fig 2. typical output characteristics 10 100 1000 5 6 7 8 9 10 11 12 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 150 c j t = 25 c j fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 75a fig 4. normalized on-resistance vs. temperature downloaded from: http:///
www.irf.com 5 pre-irradiation irhna7z60 1 10 100 0 3000 6000 9000 12000 15000 v , drain-to-source voltage (v) c , c apacitance ( pf ) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c oss c iss c rss fig 5. typical capacitance vs. drain-to-source voltage 0 100 200 300 400 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 75a v = 15v ds v = 24v ds 1 10 100 1000 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 10 100 1000 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms fig 6. typical gate charge vs. gate-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area downloaded from: http:///
6 www.irf.com irhna7z60 pre-irradiation fig 10a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature v gs 25 50 75 100 125 150 0 40 80 120 160 t , case temperature ( c) i , drain current (a) c d limited by package 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 1 0 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:///
www.irf.com 7 pre-irradiation irhna7z60 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 12 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 0 300 600 900 1200 1500 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 34a 47a 75a downloaded from: http:///
8 www.irf.com irhna7z60 pre-irradiation ? pulse width 300 s; duty cycle 2% ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. 24 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. ? repetitive rating; pulse width limited bymaximum junction temperature. ? v dd = 25v, starting t j = 25 c, l=0.17mh peak i l = 75a, v gs =12v ? i sd 75a, di/dt 94a/ s, v dd 30v, t j 150 c foot notes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 12/01 case outline and dimensions smd-2 downloaded from: http:///
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